Its blocking voltage varies from 50 volts 1n4001 to volts 1n4007. Axial lead solderable per milstd202, method 208 guaranteed. Please see the information tables in this datasheet for details. Ordering information note 4 device packaging shipping. Utc 2 amps, 600 volts nchannel mosfet,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Diode gen purpose 400v 1a do41 online from elcodis, view and download 1n4004 pdf datasheet, diodes, rectifiers single specifications. In general, x20 ratio in reverse breakdown voltages between 1n4001 and 1n4007 reflects major. Diode gen purpose 50v 1a do41 online from elcodis, view and download 1n4001 pdf datasheet, diodes, rectifiers single specifications. General purpose plastic rectifier 1n4001 thru 1n4007 vishay general semiconductor features low forward voltage drop low leakage current high forward surge capability solder dip 275 c max. Diffused junction low forward voltage drop high current capability high surge current capability. General purpose plastic rectifier 1n4001 thru 1n4007 vishay general semiconductor features low forward voltage drop low leakage current. Panjit plastic silicon rectifiervoltage 50 to volts current 1.
Description third generation power mosfets from vishay provide the. Externalsync power supply with universal input voltage range for monitors. Diode behaves open circuited for the current flow from cathode to anode. The utc 2n60 is a high voltage mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low onstate resistance and have a high rugged. Recent listings manufacturer directory get instant. K electrical characteristics tc 25c, unless otherwise specified parameter symbol test conditions min typ max unit. Semiconductor data sheets andor specifications can and do vary in different. I absolute maximum ratings tc 25, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v continuous id 20 a drain current pulsed idm 80 a avalanche energy single pulsednote 2 eas 1200 mj to247 370. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or. Recent listings manufacturer directory get instant insight into. This datasheet provides information about parts that are rohscompliant and or parts that are nonrohscompliant. High, serviceability of any semiconductor device may by impaired. Germanium glass diode 1n601n60p taitron components.
Rectron silicon rectifier,alldatasheet, datasheet, datasheet search site for electronic. Datasheet search engine for electronic components and semiconductors. Vishay, disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. Description the utc 2n60 is a high voltage power mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low onstate resistance and have a high rugged avalanche characteristics. The 1n400x or 1n4001 or 1n4000 series is a family of popular 1 a generalpurpose silicon rectifier diodes commonly used in ac adapters for common household appliances.
Vishay, disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o. C 1n4001 1n4007 general purpose rectifiers glass passivated absolute maximum ratings t a 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Diode 1n4001 data sheet pn junction diode 1n4001 specifications 1n4001. General purpose plastic rectifier vishay intertechnology. View 1n4001 thru 1n4007 datasheet from vishay semiconductor diodes division at digikey. General purpose plastic rectifier 1n4001 thru 1n4007 vishay. Parameter symbols 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007 units maximum recurrent peak reverse voltage v rrm 50 100 200 400 600 800 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 v maximum average forward rectified current 0. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching. Zener diodes free delivery possible on eligible purchases. Fqp8n60cfqpf8n60c 600v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology.
Definition of terms datasheet identification product status advance information formative in, 1n4001 1n4007 general purpose rectifiers features a. Chenda general purpose silicon rectifier,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Diode is a rectifying device which conducts only from anode to cathode. The difference between these diodes is mainly their reverse breakdown voltage. Parameters provided in datasheets and or specifications may vary in different ap plications and perfor mance may vary over. C1 1n4001 1n4007 general purpose rectifiers absolute maximum ratings t a 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. This jedec device number series is available in the do41 axial package, and similar diodes are available in sma and melf surface mount packages in. Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007 unit.
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